High efficiency S-band 30 W power GaAs FETs

Author

Takenaka, I. ; Takahashi, H. ; Asano, K. ; Morikawa, J. ; Ishikura, K. ; Kanamori, M. ; Kuzuhara, M. ; Tsutsui, H.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Shiga, Japan

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1417

Abstract

An S-band high-efficiency power GaAs MESFET has been developed by employing the second-harmonic terminating technique in both the input and output matching circuits. This internally matched power FET demonstrates state-of-the-art performance of 30.9 W (44.9 dBm) output power with more than 60% power-added efficiency and a 15.0 dB linear gain at 2.5 GHz. Successful termination of the second-harmonic was confirmed by measuring gate and drain voltage waveforms using EOS (Electro-Optic Sampling). This amplifier can be assembled in conventional ceramic package, and thus is suitable for satellite communication system applications.

Keywords

III-V semiconductors; UHF field effect transistors; UHF power amplifiers; gallium arsenide; impedance matching; mobile satellite communication; power MESFET; power field effect transistors; 15 dB; 2.5 GHz; 30.9 W; 60 percent; GaAs; S-band; ceramic package; electro-optic sampling; input matching circuits; internally matched power FET; linear gain; output matching circuits; output power; power MESFET; power-added efficiency; satellite mobile communication system applications; second-harmonic terminating technique; second-harmonic termination; voltage waveforms; Earth Observing System; FETs; Gallium arsenide; Impedance matching; MESFET circuits; Performance gain; Power amplifiers; Power generation; Termination of employment; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596595

Filename

596595