Title :
A novel double-well isolation structure for high voltage ICs
Author :
Sun, Weifeng ; Zhu, Jing ; Qian, Qinsong ; Hou, Bo ; Su, Wei ; Zhang, Sen
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
A novel double-well (DW) divided RESURF isolation structure featuring two slender N-Well regions at N--Well, aiming at improving the off-state breakdown voltage for high voltage IC (HVIC) is proposed in this paper. The N-Well regions in the presented structure efficiently prevent N--Well which used for the drift region of the Lateral Double Diffused MOSFET (LDMOS) from depleting with P-Well, so as to maintain the RESURF condition. The experiment results show that the proposed structure exhibits the breakdown voltage of 760V which has an improvement of 15% compared with the conventional structure.
Keywords :
isolation technology; power MOSFET; power integrated circuits; semiconductor device breakdown; semiconductor device models; HVIC; LDMOS; P-Well; RESURF isolation structure; double-well isolation structure; high voltage IC; lateral double diffused MOSFET; off-state breakdown voltage; slender N-Well region; voltage 760 V; Breakdown voltage; Current measurement; Electric breakdown; Integrated circuits; Leakage current; Voltage control; Voltage measurement; divided RESURF; double well; high voltage ICs; isolation;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229056
