DocumentCode :
2473823
Title :
A novel high voltage start-up current source for SMPS
Author :
Hu, Hao ; Lin, Zhi ; Chen, Xingbi
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2012
fDate :
3-7 June 2012
Firstpage :
197
Lastpage :
200
Abstract :
A novel high voltage start-up current source to provide start-up current for integrated circuits in a switched mode power supply (SMPS) is presented. The current source contains a VDMOS transistor to sustain high voltage. The gate of the VDMOS transistor is biased at a certain voltage by a floating p-island, to provide start-up current. A NMOS transistor is used to turn on and off the current source. Experimental results indicate the high voltage start-up current source is able to start and restart as designed. The current source draws no current from the line after turned off. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.
Keywords :
MOSFET; power supply circuits; NMOS transistor; SMPS; VDMOS transistor; energy saving; floating p-island; high voltage start-up current source; integrated circuits; start-up current; switched mode power supply; Logic gates; MOSFETs; Patents; Resistors; Switched-mode power supply; Threshold voltage; current source; power supply; start-up;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
ISSN :
1943-653X
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
Type :
conf
DOI :
10.1109/ISPSD.2012.6229057
Filename :
6229057
Link To Document :
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