Title :
High-temperature CW operation of optically-pumped W-lasers
Author :
Bewley, W.W. ; Felix, C.L. ; Aifer, E.A. ; Vurgaftman, I. ; Olafsen, L.J. ; Meyer, J.R. ; Lee, H. ; Martinelli, R.U. ; Connolly, J.C. ; Sugg, A.R. ; Olsen, G.H.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
We report the high-temperature cw operation of optically-pumped W-lasers (so named because of the shape of the conduction band minimum). The active region of the MBE-grown structure consists of 80 periods of 16/25/40 Å InAs-GaInSb-AlAs-AlAsSb clad on top and bottom. The cladding and active regions are lattice matched to the GaSb substrate
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; optical pumping; semiconductor growth; semiconductor lasers; 16 A; 25 A; 40 A; GaSb; GaSb substrate; InAs-GaInSb-AlAs-AlAsSb; MBE-grown structure; active region; conduction band minimum shape; high-temperature CW operation; lattice matched; optically-pumped W-lasers; Copper; Heat pumps; Laboratories; Laser excitation; Optical pumping; Optical sensors; Power generation; Pump lasers; Semiconductor lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739717
