Title :
Continuous-wave operation of GaInAsSb/GaSb type-II quantum well lasers near room temperature
Author :
Keo, S.A. ; Dougherty, D. ; Young, M.G. ; Forouhar, S. ; Nicolas, J.C. ; Baranov, A.N.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Summary form only given. Using GaInAsSb-GaSb type-II quantum wells, room temperature, broad area lasers with a pulsed threshold current density of approximately 300A/cm2 have been demonstrated. We present the CW operation of GaInAsSb-GaSb type-II quantum well ridge lasers at a wavelength of 2.36 μm near room temperature. The energy band diagram of the MBE-grown structure is shown
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 2.36 mum; GaInAsSb-GaSb; GaInAsSb-GaSb type-II QW room temperature broad area lasers; GaInAsSb-GaSb type-II quantum well ridge lasers; GaInAsSb/GaSb type-II quantum well lasers; MBE-grown structure; continuous-wave operation; energy band diagram; pulsed threshold current density; room temperature; Absorption; Gas lasers; Optical pulses; Optical sensors; Planarization; Quantum well lasers; Semiconductor lasers; Space technology; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739718
