Continuous-wave operation of GaInAsSb/GaSb type-II quantum well lasers near room temperature

Author

Keo, S.A. ; Dougherty, D. ; Young, M.G. ; Forouhar, S. ; Nicolas, J.C. ; Baranov, A.N.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

374

Abstract

Summary form only given. Using GaInAsSb-GaSb type-II quantum wells, room temperature, broad area lasers with a pulsed threshold current density of approximately 300A/cm² have been demonstrated. We present the CW operation of GaInAsSb-GaSb type-II quantum well ridge lasers at a wavelength of 2.36 μm near room temperature. The energy band diagram of the MBE-grown structure is shown

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 2.36 mum; GaInAsSb-GaSb; GaInAsSb-GaSb type-II QW room temperature broad area lasers; GaInAsSb-GaSb type-II quantum well ridge lasers; GaInAsSb/GaSb type-II quantum well lasers; MBE-grown structure; continuous-wave operation; energy band diagram; pulsed threshold current density; room temperature; Absorption; Gas lasers; Optical pulses; Optical sensors; Planarization; Quantum well lasers; Semiconductor lasers; Space technology; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739718

Filename

739718