Improved efficiency in 2 μm broadened waveguide GaInAsSb/AlGaAsSb multiple quantum well lasers

Author

Newell, T. ; Gray, A.L. ; Lee, H. ; Dorato, S. ; Lester, L.F.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

376

Abstract

Broadened waveguide 2 μm GaInAsSb-AlGaAsSb QW lasers have low internal loss since the overlap between the lossy cladding regions and the optical field is small. However, a broadened waveguide increases the likelihood of recombination in the barrier region, especially if QW carrier confinement is poor, and could cause injection efficiency to decrease. In latticed-matched GaInAsSb-AlGaAsSb QWs, the valence band barrier is very small for a wide range of compositions

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; valence bands; waveguide lasers; 2 μm broadened waveguide GaInAsSb/A1GaAsSb multiple quantum well lasers; 2 mum; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb QW lasers; QW carrier confinement; barrier region; injection efficiency; latticed-matched GaInAsSb-AlGaAsSb QWs; lossy cladding regions; low internal loss; optical field; valence band barrier; Aluminum; Artificial intelligence; Capacitive sensors; Electrons; Quantum well lasers; Radiative recombination; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739719

Filename

739719