DocumentCode
2473920
Title
Bit-pattern sensitivity analysis and optimal on-die-termination for high-speed memory bus design
Author
Mintarno, Evelyn ; Ji, Steven Yun
Author_Institution
Stanford Univ., Stanford, CA, USA
fYear
2009
fDate
19-21 Oct. 2009
Firstpage
199
Lastpage
202
Abstract
System IO power and performance are critical computer platform design parameters. IO power forms a significant portion of the overall power while its performance is often the bottleneck in achieving overall performance specification. This paper experimentally demonstrates, for the first time, optimal on-die-termination (ODT) schemes for DDR3-800 MT/s and DDR31067 MT/s, revealed by thorough bit-pattern sensitivity analysis. Optimal ODT at IO receiver pads is proposed as a new critical design knob to achieve optimized power-performance trade-offs, dramatically improving signal integrity and power consumption. The thorough bit-pattern sensitivity analysis was found to be 100% more accurate than traditional approach. Up to 50% reduction in power consumption, 100% increase in timing margin, and 100% increase in voltage margin were demonstrated as the impact of the choice of ODT. It is also promised to become more important in the future at higher data rate.
Keywords
DRAM chips; low-power electronics; sensitivity analysis; DDR3- 1067 MT/s; DDR3-800 MT/s; DRAM ODT scheme; IO power; SDRAM; bit-pattern sensitivity analysis; high-speed memory bus design; low power consumption; optimal on-die-termination; optimized power-performance trade-offs; signal integrity; voltage margin; Crosstalk; Energy consumption; Intersymbol interference; Reflection; Resonance; Routing; Sensitivity analysis; Timing; Transmitters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging and Systems, 2009. EPEPS '09. IEEE 18th Conference on
Conference_Location
Portland, OR
Print_ISBN
978-1-4244-4447-2
Electronic_ISBN
978-1-4244-5646-8
Type
conf
DOI
10.1109/EPEPS.2009.5338442
Filename
5338442
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