Title :
Design of 700V LIGBT with the suppressed substrate current in a 0.5um junction isolated technology
Author :
Su, R.Y. ; Cheng, C.C. ; Huo, K.H. ; Yang, F.J. ; Tsai, J.L. ; Liou, R.S. ; Tuan, H.C.
Author_Institution :
Power IC Program, TSMC, Hsinchu, Taiwan
Abstract :
In this paper, a 700V lateral insulated gate bipolar transistor (LIGBT) design is proposed in a junction-isolated technology. Several key properties of LIGBT, such as hole injection leakage and breakdown-voltage, are investigated by using two-dimensional numerical simulator, MEDICI. To improve vertical junction isolation capability, an extra BLN (Buried-Layer N-type) layer is inserted in-between the BLP (Buried-Layer P-type) and the P-substrate, to enhance hole potential barrier and to block substrate leakage as well as to ensure high breakdown voltage (>;700V). An optimized LIGBT with high breakdown-voltage, very low substrate-leakage (<;0.1uA/um), and low switching turn-off time, are presented and analyzed.
Keywords :
insulated gate bipolar transistors; numerical analysis; semiconductor junctions; substrates; BLN layer; BLP; LIGBT design; MEDICI two-dimensional numerical simulator; block substrate leakage; breakdown-voltage; buried-layer n-type layer; buried-layer p-type layer; hole injection leakage; hole potential barrier; junction isolated technology; lateral insulated gate bipolar transistor design; p-substrate; size 0.5 mum; suppressed substrate current; vertical junction isolation capability; voltage 700 V; Anodes; Current distribution; Electric potential; Insulated gate bipolar transistors; Junctions; Logic gates; Substrates; Breakdown voltage; Hole injection leakage; Hole potential barrier; Junction isolated technology; Lateral IGBT;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229063
