Title :
Typical electron beam doping (superdiffusion) of impurity atoms in damage-free regions of semiconductors by the kick-out mechanism
Author :
Wada, T. ; Fujimoto, H. ; Asada, S.
Author_Institution :
Dept. of Appl. Electron., Daido Inst. of Technol., Nagoya, Japan
Abstract :
The present experiments of 750 keV electron beam doping (EBD) of Si atoms into GaAs layers were performed at room temperature. The concentration profiles of Si atoms measured by SIMS and PL in GaAs wafers were plotted as a function of depth from the GaAs surfaces. It has been reported that their profiles were in good agreement with the exact solutions of the kick-out mechanism.
Keywords :
III-V semiconductors; diffusion; doping profiles; electron beam effects; gallium arsenide; photoluminescence; secondary ion mass spectra; semiconductor doping; silicon; 750 keV; GaAs:Si; SIMS; concentration profile; electron beam doping; impurity superdiffusion; kick-out mechanism; photoluminescence; semiconductor; Atomic beams; Atomic layer deposition; Atomic measurements; Electron beams; Gallium arsenide; Land surface; Semiconductor device doping; Semiconductor films; Semiconductor impurities; Temperature;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872706
