Reliability investigation of SiC bipolar device module in long time inverter operation

Author

Tanaka, A. ; Ogata, S. ; Izumi, T. ; Nakayama, K. ; Hayashi, T. ; Miyanagi, Y. ; Asano, K.

Author_Institution

Power Eng. R&D Center, Kansai Electr. Power Co., Inc., Amagasaki, Japan

fYear

2012

fDate

3-7 June 2012

Firstpage

233

Lastpage

236

Abstract

The reliability of SiC bipolar device modules consisting of SiC commutated gate turn-off thyristors and SiC pin diodes fabricated on a 4° off-cut SiC substrate is investigated. According to three-phase inverter operation using a Back to Back system at DC bus voltage of 2 kV and effective output power of approximately 120 kW, the SiC module could achieve the world´s first successful inverter operation lasting more than 1000 hours, thereby verifying its reliability in long time inverter operation.

Keywords

invertors; p-i-n diodes; semiconductor device models; semiconductor device reliability; thyristors; SiC; SiC bipolar device module; commutated gate turn-off thyristor; long time inverter operation; pin diodes; power 120 kW; reliability; three-phase inverter operation; voltage 2 kV; Current measurement; Inverters; Reliability; Silicon carbide; Substrates; Temperature measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229066

Filename

6229066