Title :
Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C
Author :
Chu, Rongming ; Brown, David ; Zehnder, Daniel ; Chen, Xu ; Williams, Adam ; Li, Ray ; Chen, Mary ; Newell, Scott ; Boutros, Karim
Author_Institution :
HRL Labs., LLC, Malibu, CA, USA
Abstract :
We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200 °C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.
Keywords :
MISFET; gallium compounds; GaN-Si; MISFET; blocking capability; metal-insulator-semiconductor field-effect transistor; temperature 200 degC; FETs; Gallium nitride; Logic gates; Temperature; Temperature measurement; Threshold voltage; GaN-on-Si; blocking voltage; field-effect transistor; high temperature; normally-off;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229067
