Title :
High efficiency 11 watt octave S/C-band PHEMT MMIC power amplifier
Author :
Komiak, J.J. ; Wang, S.C. ; Rogers, T.J.
Author_Institution :
Sanders Associates Inc., Nashua, NH, USA
Abstract :
Design and performance of 0.25 um double fully selective recess PHEMT power amplifiers that have established new benchmarks for octave band power and efficiency are reported. The amplifiers tested from two lots, ten wafers total, average 11 Watts at 42% PAE with 17 dB power gain from 3 to 6 GHz, with peak performance of 17 Watts at 54.5% PAE and yields of 49.9%.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; etching; integrated circuit yield; wideband amplifiers; 0.25 micron; 11 W; 17 W; 17 dB; 3 to 6 GHz; 42 percent; 54.5 percent; C-band; PAE; PHEMT MMIC power amplifier; S-band; double fully selective recess PHEMT; octave band efficiency; octave band power; power gain; yields; Broadband amplifiers; Costs; Etching; Gallium arsenide; High power amplifiers; Impedance; MMICs; PHEMTs; Power amplifiers; Testing;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596596
