Title :
200 kVA compact IGBT modules with double-sided cooling for HEV and EV
Author :
Chang, Hsueh-Rong ; Bu, Jiankang ; Hauenstein, Henning ; Wittmann, Michael ; Marcinkowski, Jack ; Pavier, Mark ; Palmer, Scott ; Tompkins, Jim
Author_Institution :
Automotive Product Bus. Unit, Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
High power compact IGBT half bridge modules with a current rating of 300A and a blocking voltage of 650V using ultra thin IGBTs and diodes have been successfully developed with double-sided cooling capability. The wirebond-less package building block called COOLiR2DIE™ has a small area of 28.5 mm × 16 mm with a power rating 200 kVA, This is the most compact IGBT package reported today. A low on-state voltage of 1.6V at 300A is achieved in the wirebond-less package. The combination of lower on-state voltage and larger heat exchange area due to the solderable front metal (SFM), increases the IGBT module current carrying capability by 30%.
Keywords :
cooling; diodes; hybrid electric vehicles; insulated gate bipolar transistors; metals; COOLiR2DIE; HEV; SFM; apparent power 200 kVA; current 300 A; diodes; double-sided cooling; heat exchange; high power compact IGBT half bridge modules; hybrid electric vehicles; solderable front metal; voltage 1.6 V; voltage 650 V; wirebond-less package building block; Bridge circuits; Cooling; Hybrid electric vehicles; Insulated gate bipolar transistors; Metals; Oscillators; Power dissipation;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229082