DocumentCode :
2474380
Title :
Probing semiconductor nano-structures with synchrotron radiation and STM
Author :
Hamilton, B.
Author_Institution :
Dept. of Phys., Univ. of Manchester Inst. of Sci. & Technol., UK
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
238
Abstract :
In this talk, I describe work being carried out at UMIST and Daresbury Laboratory which is providing new experimental tools for measuring nano-scale structures. Synchrotron radiation, L edge absorption experiments, have demonstrated that local chemistry and electronic behaviour can be linked on the nano-structured silicon. Recent work has also shown that electron transport through nano-structured films is controlled by percolation phenomena, similar to transport in polymer films. The possibility of combining STM with photon probes is reviewed and examples of highly localised optical spectroscopy detected using STM are given.
Keywords :
X-ray absorption; nanostructured materials; scanning tunnelling microscopy; semiconductors; synchrotron radiation; L-edge absorption; STM; Si; electron transport; optical spectroscopy; percolation; semiconductor nanostructure; synchrotron radiation; thin film; Absorption; Chemistry; Electrons; Laboratories; Nanostructures; Optical films; Polymer films; Probes; Silicon; Synchrotron radiation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872733
Filename :
872733
Link To Document :
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