Title :
Control of current hysteresis effects in a GaAs/n-AlGaAs quantum trap FET with embedded InAs quantum dots
Author :
Kim, Hoon ; Noda, Takeshi ; Kawazu, Takuya ; Sakaki, Hiroyuki
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
We have studied various aspects of GaAs/n-AlGaAs heterojunctions with self-assembled QDs near the channel. In particular, we have shown that the V/sub g/ dependence of the electron concentration in the channel is varied by trapping one electron in each QD. However, although much work has been done on current hysteresis characteristics of QD-memory devices, comparatively little is known on the control of its direction by modulating the initial conditions and shape of QDs memory cell. This letter draws attention to a previously unnoticed variation of current hysteresis effects associated with the height of InAs QDs. We also show that the channel current hysteresis is only controllable by regulating the initial gate-to-source bias conditions.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; quantum well devices; semiconductor quantum dots; semiconductor storage; GaAs-AlGaAs; GaAs/n-AlGaAs modulation doped heterojunction; InAs; InAs quantum dot; current hysteresis; electron concentration; memory device; quantum trap FET; self-assembly; Electron traps; FETs; Gallium arsenide; Heterojunctions; Hysteresis; Industrial control; Leakage current; Quantum dots; Shape control; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872735