Title :
A new quantum dot formation process using wet etching of poly-Si along grain boundaries
Author :
Yoo, Seong-jong ; Lee, Jongho ; Shin, Hyungcheol
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.
Keywords :
MOS capacitors; elemental semiconductors; etching; grain boundaries; semiconductor quantum dots; silicon; MOS capacitor; Si; electrical characteristics; grain boundary; nanocrystal; polysilicon; quantum dot; wet etching; Amorphous materials; Annealing; EPROM; Grain boundaries; MOS capacitors; Nonvolatile memory; Quantum dots; Tunneling; US Department of Transportation; Wet etching;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872738
