DocumentCode
2474490
Title
A new quantum dot formation process using wet etching of poly-Si along grain boundaries
Author
Yoo, Seong-jong ; Lee, Jongho ; Shin, Hyungcheol
Author_Institution
Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear
2000
fDate
11-13 July 2000
Firstpage
248
Lastpage
249
Abstract
We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.
Keywords
MOS capacitors; elemental semiconductors; etching; grain boundaries; semiconductor quantum dots; silicon; MOS capacitor; Si; electrical characteristics; grain boundary; nanocrystal; polysilicon; quantum dot; wet etching; Amorphous materials; Annealing; EPROM; Grain boundaries; MOS capacitors; Nonvolatile memory; Quantum dots; Tunneling; US Department of Transportation; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872738
Filename
872738
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