Title :
Recent activities in the development of EUV lithography at ASET
Author_Institution :
EUVL Lab., Assoc. of Super-Adv. Electron. Technol., Kanagawa, Japan
Abstract :
EUV lithography is the most promising candidate for the fabrication of devices with feature sizes of 70 nm and below. Since October, 1998, ASET has been working on the development of the basic technologies of EUV lithography in cooperation with Prof. H.Kinoshita of the Himeji Institute of Technology. These technologies can be broken down into three categories: exposure system, multilayer mask, and resist process.
Keywords :
ultraviolet lithography; 70 nm; ASET; EUV lithography; exposure system; multilayer mask; resist process; Cleaning; Fabrication; Laboratories; Lithography; Metrology; Nonhomogeneous media; Optical imaging; Optical interferometry; Resists; Ultraviolet sources;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872749
