Title :
Optics for EUV lithography
Author :
Kurz, P. ; Mann, H.-J. ; Antoni, M. ; Singer, W. ; Muhlbeyer, M. ; Melzer, F. ; Dinger, U. ; Weiser, M. ; Stacklies, S. ; Seitz, G. ; Haidl, F. ; Sohmen, E. ; Kaiser, W.
Author_Institution :
Carl Zeiss, Oberkochen, Germany
Abstract :
Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrialization of EUVL optical systems.
Keywords :
ultraviolet lithography; 13 nm; Carl Zeiss; EUV lithography; next generation lithography; optical system; Coatings; Electronic mail; Lithography; Metrology; Mirrors; Optical design; Optical design techniques; Optical device fabrication; Ultraviolet sources;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872750
