• DocumentCode
    2474678
  • Title

    Plasma etching processes for the reduction of global warming emissions

  • Author

    Reif, R. ; Chatterjee, R. ; Karecki, S. ; Pruette, L.

  • Author_Institution
    Microsystems Technol. Lab., MIT, Cambridge, MA, USA
  • fYear
    2000
  • fDate
    11-13 July 2000
  • Firstpage
    266
  • Abstract
    Summary form only given, as follows. A significant issue facing the semiconductor industry is the emissions of long lived global warming gases such as perfluorocarbons (PFCs) like CF/sub 4/, C/sub 2/F/sub 6/, and C/sub 3/F/sub 8/ which are used for dielectric etch. In 1998, the Kyoto Protocol set quantitative targets on the reduction of global warming gases in the developed countries. Within the semiconductor industry, the World Semiconductor Council, representing the semiconductor manufacturers in Europe, Japan, Korea, Taiwan, and the USA, has agreed to a ten percent reduction in greenhouse emissions relative to a baseline year by the year 2010. Possible solutions to this problem include process optimization, abatement of the effluents, capture and recovery, and alternative chemistries which are more benign from a global warming standpoint. The investigation of alternative chemistries is viewed as a long term solution.
  • Keywords
    environmental factors; sputter etching; global warming; greenhouse gas emission; perfluorocarbon; plasma etching; semiconductor processing; Chemistry; Dielectrics; Electronics industry; Global warming; Plasma applications; Protocols; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2000 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-004-6
  • Type

    conf

  • DOI
    10.1109/IMNC.2000.872753
  • Filename
    872753