• DocumentCode
    2474761
  • Title

    Damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF6/H2 downstream plasma

  • Author

    Yanagisawa, Michihiko ; Ogawa, Hiroki ; Horiike, Yasuhiro

  • Author_Institution
    Speedfam-IPEC Co. Ltd., Kanagawa, Japan
  • fYear
    2000
  • fDate
    11-13 July 2000
  • Firstpage
    274
  • Lastpage
    275
  • Abstract
    This paper reports a new damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma based on CDE (chemical dry etching) and diseases the dirty texture formation mechanism of the etched Si wafer surface.
  • Keywords
    elemental semiconductors; numerical control; process control; silicon; sputter etching; H/sub 2/; SF/sub 6/; SF/sub 6//H/sub 2/ local downstream plasma; Si; chemical dry etching; damage-free flattening technology; large diameter Si wafer; numerical control; Argon; Chemical technology; Coordinate measuring machines; Dry etching; Electron tubes; Plasma applications; Plasma chemistry; Plasma waves; Surface discharges; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2000 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-004-6
  • Type

    conf

  • DOI
    10.1109/IMNC.2000.872759
  • Filename
    872759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2474761