Title :
Damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF6/H2 downstream plasma
Author :
Yanagisawa, Michihiko ; Ogawa, Hiroki ; Horiike, Yasuhiro
Author_Institution :
Speedfam-IPEC Co. Ltd., Kanagawa, Japan
Abstract :
This paper reports a new damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma based on CDE (chemical dry etching) and diseases the dirty texture formation mechanism of the etched Si wafer surface.
Keywords :
elemental semiconductors; numerical control; process control; silicon; sputter etching; H/sub 2/; SF/sub 6/; SF/sub 6//H/sub 2/ local downstream plasma; Si; chemical dry etching; damage-free flattening technology; large diameter Si wafer; numerical control; Argon; Chemical technology; Coordinate measuring machines; Dry etching; Electron tubes; Plasma applications; Plasma chemistry; Plasma waves; Surface discharges; Thickness measurement;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872759
