Title :
Parametric counterfeit IC detection via Support Vector Machines
Author :
Huang, Ke ; Carulli, John M., Jr. ; Makris, Yiorgos
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
We present a method to detect a common type of counterfeit Integrated Circuits (ICs), namely used ones, from their brand new counterparts using Support Vector Machines (SVMs). In particular, we demonstrate that we can train a one-class SVM classifier using only a distribution of process variation-affected brand new devices, but without prior information regarding the impact of transistor aging on the IC behavior, to accurately distinguish between these two classes based on simple parametric measurements. We demonstrate effectiveness of the proposed method using a set of actual fabricated devices which have been subjected to burn-in test, in order to mimic the impact of aging degradation over time, and we discuss the limitations and the potential extensions of this approach.
Keywords :
ageing; circuit analysis computing; integrated circuit measurement; integrated circuit testing; support vector machines; transistors; IC behavior; SVM; aging degradation; counterfeit integrated circuits; fabricated devices; one-class SVM classifier; parametric burn-in test analysis; parametric counterfeit IC detection; parametric measurements; support vector machines; transistor aging; Aging; Degradation; Integrated circuits; Kernel; Logic gates; Reliability; Support vector machines; Counterfeit IC detection; one-class SVM classifier; parametric burn-in test;
Conference_Titel :
Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2012 IEEE International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-3043-5
DOI :
10.1109/DFT.2012.6378191