DocumentCode
2474930
Title
Chemically amplified electron beam positive resist with acetal protecting group-effect of the additives on resist properties
Author
Saito, Satoshi ; Kihara, Naoko ; Ushirogouchi, Tohru
Author_Institution
Corp. Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
2000
fDate
11-13 July 2000
Firstpage
290
Lastpage
291
Abstract
We discuss a high-sensitivity electron beam (EB) positive resist based on acetal-protected poly(hydroxystyrene) (PHS) and also propose a new chemical amplification system. In this system, the generated acid after EB exposure acts as the catalyst for the deprotection reaction, as well as the water-generating reaction. This system can make the combination of acetal protecting group and strong acid possible in EB lithography.
Keywords
electron resists; polymer films; PHS; acetal protecting group; additive; catalyst; chemically amplified positive resist; deprotection reaction; electron beam lithography; photoacid generator; poly(hydroxystyrene); water generating reaction; Additives; Chemical compounds; Chemical technology; Electron beams; Lithography; Optical device fabrication; Polymers; Protection; Research and development; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872768
Filename
872768
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