Title :
Simulation of Geiger mode silicon carbide avalanche photodiode
Author :
Zhou, Qiugui ; Liu, Han-Din ; Mcintosh, Dion ; Hu, Chong ; Campbell, Joe C.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
The breakdown probability and timing jitter of silicon carbide single-photon avalanche diodes were simulated with a random path length Monte-Carlo model. The results are in good agreement with the measured device characteristics.
Keywords :
Monte Carlo methods; avalanche photodiodes; photodetectors; semiconductor device breakdown; silicon compounds; timing jitter; wide band gap semiconductors; Geiger mode; SiC; breakdown probability; random path length Monte-Carlo model; single-photon avalanche diodes; timing jitter; Absorption; Avalanche photodiodes; Electric breakdown; Impact ionization; Silicon carbide; Timing jitter; Voltage measurement; Avalanche photodiode; photodetector; timing jitter;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595642
