Title :
Spin polarized semiconductor lasers
Author :
Bhattacharya, Pallab ; Basu, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
We have derived analytical expressions for threshold current reduction, output polarization, the gain anisotropy parameter and the spin laser frequency response taking into account the diffusion of spin polarized carriers from the ferromagnetic contact to the active region and spin-coupled laser rate equations. The validity of the derivations is endorsed by excellent agreement of these parameters from measurements done on spin-VCSELs.
Keywords :
frequency response; semiconductor lasers; spin polarised transport; surface emitting lasers; ferromagnetic contact; gain anisotropy parameter; spin laser frequency response; spin polarized semiconductor lasers; spin-VCSEL; spin-coupled laser rate equations; threshold current reduction; Laser modes; Modulation; Quantum dot lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595643
