DocumentCode
2475029
Title
Application of organic silicon cluster to patter transfer process for deep UV lithography
Author
Sato, Y. ; Shiobara, E. ; Abe, J. ; Onishi, Y. ; Nakano, Y. ; Hayase, S.
Author_Institution
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
fYear
2000
fDate
11-13 July 2000
Firstpage
300
Lastpage
301
Abstract
In this paper, organic silicon cluster is investigated as bottom anti-reflective coating (BARC) material compatible with the RIE mask for the substrate(oxide) etch in a thin resist process for deep UV lithography. It can be simply spin-coated and suppress reflection by single layer BARC process. Excellent etch properties closer to a-Si, namely high etch selectivity of resist:BARC during BARC etch and great etch resistance without deformation during oxide etch, are achieved.
Keywords
antireflection coatings; organic compounds; photoresists; spin coating; sputter etching; ultraviolet lithography; RIE mask; bottom antireflective coating; deep UV lithography; organic silicon cluster; patter transfer; spin coating; substrate etching; thin resist process; Bonding; Etching; Lithography; Optical films; Reflectivity; Refractive index; Resists; Semiconductor films; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872775
Filename
872775
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