DocumentCode
2475032
Title
Detectivity simulation of Long-wavelength quantum well infrared photodetectors
Author
Xiong, D.Y. ; Qiu, W.Y. ; Weng, Q.C. ; Fan, L.
Author_Institution
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
fYear
2010
fDate
6-9 Sept. 2010
Firstpage
101
Lastpage
102
Abstract
We present the results of a method for the detectivity simulation of multi-period AlGaAs/GaAs Long-wavelength quantum well infrared photodetectors (LW-QWIPs) directly from the characterized device parameters in a self-consistent way. This simulation method takes into account the fundamental mechanisms involved in the detection process. The electrical field distribution, currents and detectivity are carefully calculated and analyzed. The numerical results agree well with our experimental observations.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; quantum well devices; AlGaAs-GaAs; detectivity simulation; device parameters; electrical field distribution; long-wavelength quantum well infrared photodetectors; self-consistent; Current density; Electric fields; Laboratories; Lighting; Materials; Noise; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location
Atlanta, GA
ISSN
2158-3234
Print_ISBN
978-1-4244-7016-7
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2010.5595645
Filename
5595645
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