Title :
Detectivity simulation of Long-wavelength quantum well infrared photodetectors
Author :
Xiong, D.Y. ; Qiu, W.Y. ; Weng, Q.C. ; Fan, L.
Author_Institution :
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
Abstract :
We present the results of a method for the detectivity simulation of multi-period AlGaAs/GaAs Long-wavelength quantum well infrared photodetectors (LW-QWIPs) directly from the characterized device parameters in a self-consistent way. This simulation method takes into account the fundamental mechanisms involved in the detection process. The electrical field distribution, currents and detectivity are carefully calculated and analyzed. The numerical results agree well with our experimental observations.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; quantum well devices; AlGaAs-GaAs; detectivity simulation; device parameters; electrical field distribution; long-wavelength quantum well infrared photodetectors; self-consistent; Current density; Electric fields; Laboratories; Lighting; Materials; Noise; Temperature measurement;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595645
