Title :
A 3.3V operation single HBT power amplifier MMIC for 2.4GHz/5GHz dual-band WLAN applications
Author :
Noh, Youn S. ; Kim, Ji H. ; Park, Jong H. ; Park, C.S.
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ. (ICU), Daejeon, South Korea
Abstract :
A 3.3 V operation single InGaP/GaAs HBT power amplifier MMIC (monolithic microwave integrated circuit) was developed for 2.4 GHz/5 GHz dual-band WLAN (wireless local area network) applications. The fabricated MMIC was as small as 1070 × 1000 μm2 including input matching circuit, interstage matching circuit, and bias circuit with band selection function. The highly linear and efficient amplifier exhibits a P1dB (1dB gain compression output power) of 27 (27.2/27) dBm with a PAE (power added efficiency) of 42 (31.2/31) % at 2.45 (5.2/5.3) GHz. The linear output power for the EVM (error vector magnitude) of 5% using a 54 Mbit/s 64 QAM (quadrature amplitude modulation) OFDM (orthogonal frequency division multiplexing) signal was 22 (21.2/21) dBm with the PAE of 23.5 (16.5/16.5) % at 2.45 (5.2/5.3) GHz.
Keywords :
MMIC power amplifiers; OFDM modulation; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; impedance matching; indium compounds; mobile computing; quadrature amplitude modulation; wireless LAN; 2.4 GHz; 2.45 GHz; 23.5 percent; 42 percent; 5 GHz; 54 Mbit/s; 64 QAM; HBT power amplifier; InGaP-GaAs; InGaP/GaAs; MMIC; OFDM; band selection function; bias circuit; dual-band WLAN applications; input matching circuit; interstage matching circuit; linear amplifier; monolithic microwave integrated circuit; orthogonal frequency division multiplexing; quadrature amplitude modulation; wireless local area network; Circuits; Dual band; Heterojunction bipolar transistors; MMICs; OFDM; Operational amplifiers; Power amplifiers; Power generation; Quadrature amplitude modulation; Wireless LAN;
Conference_Titel :
Radio and Wireless Conference, 2004 IEEE
Print_ISBN :
0-7803-8451-2
DOI :
10.1109/RAWCON.2004.1389182
