Title :
Effects of absorption layer characteristic on spectral photoresponse of mid-wavelength InSb photodiodes
Author :
Hu, W.D. ; Chen, X.S. ; Meng, C. ; Lv, Y.Q. ; Lu, W.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
We report on 2D numerical simulations of photoresponse characteristic for mid-wavelength InSb infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated for both front-side and back-side illuminated devices. Optimal thickness of absorption layers for different diffusion lengths are extracted theoretically. An empirical formula is proposed to predict a reasonable optimal thickness of absorption layer.
Keywords :
indium compounds; numerical analysis; photodiodes; 2D numerical simulations; InSb; absorption layer characteristic effects; back-side illuminated devices; front-side illuminated devices; mid-wavelength photodiodes; spectral photoresponse; Absorption; Mathematical model; Numerical models; Numerical simulation; Performance evaluation; Photodetectors; Semiconductor process modeling;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595647
