DocumentCode :
247523
Title :
X-band predistortion linearized GaN HPA for broadband satellite communications
Author :
Xiaoqiang Xie ; Zheng Zhong ; Yong-Xin Guo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2014
fDate :
19-21 Nov. 2014
Firstpage :
433
Lastpage :
436
Abstract :
This paper presents a novel method of predistortion linearization for an X-band GaN High Power amplifier (HPA) in a broadband satellite communication transmitter. With parallel Schottky diodes integrated with a CPW line, predistortion transmission characteristics (AM-AM and PM-AM) are obtained as the reverse of the GaN HPA nonlinear-transmission characteristics in both magnitude and phase. Then an X-band linearized GaN HPA is developed and measured; the corresponding measurement shows that an IM3 improvement more than 10.7dB can be achieved within 7.9 to 8.4GHz at output power of 40dBm.
Keywords :
III-V semiconductors; Schottky diodes; coplanar waveguide components; gallium compounds; linearisation techniques; microwave power amplifiers; radio transmitters; satellite communication; wide band gap semiconductors; AM-AM predistortion transmission; GaN; PM-AM predistortion transmission; X-band linearized HPA; X-band predistortion; broadband satellite communication transmitter; coplanar waveguide line; frequency 7.9 GHz to 8.4 GHz; high power amplifier; parallel Schottky diodes; predistortion linearization; Coplanar waveguides; Gallium nitride; Power generation; Predistortion; Schottky diodes; Transmitters; CPW line; GaN HPA; IM3; predistortion linearization; schottky diode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communication Systems (ICCS), 2014 IEEE International Conference on
Conference_Location :
Macau
Type :
conf
DOI :
10.1109/ICCS.2014.7024840
Filename :
7024840
Link To Document :
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