• DocumentCode
    247523
  • Title

    X-band predistortion linearized GaN HPA for broadband satellite communications

  • Author

    Xiaoqiang Xie ; Zheng Zhong ; Yong-Xin Guo

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2014
  • fDate
    19-21 Nov. 2014
  • Firstpage
    433
  • Lastpage
    436
  • Abstract
    This paper presents a novel method of predistortion linearization for an X-band GaN High Power amplifier (HPA) in a broadband satellite communication transmitter. With parallel Schottky diodes integrated with a CPW line, predistortion transmission characteristics (AM-AM and PM-AM) are obtained as the reverse of the GaN HPA nonlinear-transmission characteristics in both magnitude and phase. Then an X-band linearized GaN HPA is developed and measured; the corresponding measurement shows that an IM3 improvement more than 10.7dB can be achieved within 7.9 to 8.4GHz at output power of 40dBm.
  • Keywords
    III-V semiconductors; Schottky diodes; coplanar waveguide components; gallium compounds; linearisation techniques; microwave power amplifiers; radio transmitters; satellite communication; wide band gap semiconductors; AM-AM predistortion transmission; GaN; PM-AM predistortion transmission; X-band linearized HPA; X-band predistortion; broadband satellite communication transmitter; coplanar waveguide line; frequency 7.9 GHz to 8.4 GHz; high power amplifier; parallel Schottky diodes; predistortion linearization; Coplanar waveguides; Gallium nitride; Power generation; Predistortion; Schottky diodes; Transmitters; CPW line; GaN HPA; IM3; predistortion linearization; schottky diode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communication Systems (ICCS), 2014 IEEE International Conference on
  • Conference_Location
    Macau
  • Type

    conf

  • DOI
    10.1109/ICCS.2014.7024840
  • Filename
    7024840