Title :
Efficiency droop in III-nitride LEDs: Overview and carrier lifetime analysis
Author :
David, A. ; Grundmann, M.J.
Author_Institution :
Philips Lumileds Lighting Corp., San Jose, CA, USA
Abstract :
Gallium Nitride based light-emitting diodes (LEDs) are on the verge of enabling mainstream solid-state lighting. Their efficiency, however, is limited by a phenomenon known as droop which quenches internal quantum efficiency at high current density. We will review recent experimental results characterizing droop, and compare them to the various theories proposed these last years to explain this phenomenon.
Keywords :
III-V semiconductors; LED lamps; carrier lifetime; current density; gallium compounds; wide band gap semiconductors; GaN; current density; efficiency droop; internal quantum efficiency; light-emitting diodes; solid-state lighting; Charge carrier lifetime; Current density; Density measurement; Gallium nitride; Light emitting diodes; Radiative recombination; Semiconductor device measurement;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595654
