DocumentCode
2475239
Title
Efficiency droop in III-nitride LEDs: Overview and carrier lifetime analysis
Author
David, A. ; Grundmann, M.J.
Author_Institution
Philips Lumileds Lighting Corp., San Jose, CA, USA
fYear
2010
fDate
6-9 Sept. 2010
Firstpage
87
Lastpage
88
Abstract
Gallium Nitride based light-emitting diodes (LEDs) are on the verge of enabling mainstream solid-state lighting. Their efficiency, however, is limited by a phenomenon known as droop which quenches internal quantum efficiency at high current density. We will review recent experimental results characterizing droop, and compare them to the various theories proposed these last years to explain this phenomenon.
Keywords
III-V semiconductors; LED lamps; carrier lifetime; current density; gallium compounds; wide band gap semiconductors; GaN; current density; efficiency droop; internal quantum efficiency; light-emitting diodes; solid-state lighting; Charge carrier lifetime; Current density; Density measurement; Gallium nitride; Light emitting diodes; Radiative recombination; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location
Atlanta, GA
ISSN
2158-3234
Print_ISBN
978-1-4244-7016-7
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2010.5595654
Filename
5595654
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