Title :
12E-2 X-Band Filters Utilizing AlN Thin Film Bulk Acoustic Resonators
Author :
Hara, Motoaki ; Yokoyama, Tsuyoshi ; Ueda, Masanori ; Satoh, Yoshio
Author_Institution :
FUJITSU Ltd., Akashi
Abstract :
A filter with aluminum nitride thin-film bulk acoustic resonators (FBAR) for the X-band was developed. The FBAR has an air gap beneath the resonator to isolate acoustically from a substrate, and is extremely thin to operate in the X-band. The FBAR has two structural features - a sacrificial layer to make the air gap was very thin in order to prevent the resonator from cracking on the edge of the air gap, and a resonator was deformed to dome shape by stresses of the films to keep the air gap. The fabricated FBAR operated successfully with a keff 2 of 6.40%, a resonance Q of 246, and anti-resonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1%, a minimum insertion loss of -1.7 dB, and an out-of-band rejection of -21 dB.
Keywords :
III-V semiconductors; acoustic filters; acoustic resonators; aluminium compounds; bulk acoustic wave devices; ladder filters; thin film devices; AlN; X-band filters; air gap; aluminum nitride; insertion loss; thin film bulk acoustic resonators; Aluminum nitride; Bandwidth; Film bulk acoustic resonators; Frequency; Resonance; Resonator filters; Shape; Stress; Substrates; Transistors;
Conference_Titel :
Ultrasonics Symposium, 2007. IEEE
Conference_Location :
New York, NY
Print_ISBN :
978-1-4244-1384-3
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2007.291