Title :
Modeling of polarization effects in InGaN PIN solar cells
Author :
Lestrade, M. ; Li, Z.Q. ; Xiao, Y.G. ; Li, Z. M Simon
Author_Institution :
Crosslight Software, Burnaby, BC, Canada
Abstract :
In this paper, we study the effect of polarization on the performance of InGaN solar cells. By using the APSYS software, we show that device performance is adversely affected due to the interface charges near GaN contact layers and that alternate means of creating ohmic contacts should be considered.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; polarisation; solar cells; APSYS software; InGaN; PIN solar cells; contact layers; ohmic contacts; polarization effects; Gallium nitride; Materials; Ohmic contacts; Performance evaluation; Photonic band gap; Photovoltaic cells; Software;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595657
