Title :
Simulations of photo-carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers
Author :
Kanevce, A. ; Li, J.V. ; Crandall, R.S. ; Page, M.R. ; Iwaniczko, E.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.
Keywords :
elemental semiconductors; hole density; hydrogen; minority carriers; photoconductivity; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; Si-Si:H; heterojunction; intrinsic thin layer solar cells; light pulse duration; n-type wafers; photoexcited minority carrier decay; Capacitance; Heterojunctions; Lighting; Semiconductor device modeling; Temperature dependence; Temperature measurement; Transient analysis;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595659
