Plasma development of SR irradiated plasma polymerized resists

Author

Yamada, Hitomi ; Itoh, Satoshi ; Nakamura, Makoto ; Katoh, Hisato ; Mizutani, Teruyoshi ; Morita, Shinzo ; Hattori, Shuzo

Author_Institution

Dept. of Electron., Nagoya Univ., Japan

fYear

1988

fDate

5-8 June 1988

Firstpage

158

Lastpage

161

Abstract

Synchrotron radiation (SR) vacuum lithography was carried out using plasma chemical processes. Plasma-polymerized and -copolymerized polymethyl methacrylate (PMMA) resists were irradiated by SR directly, and the film thickness was reduced due to the random decomposition of the polymer. Self-development was enhanced by incorporation of Sn, S, F and I as sensitizers into plasma-polymerized while it was restrained by incorporation of styrene. The thickness reduction was completely saturated at a high dose for all plasma-polymerized resists. Oxygen plasma etching enhanced the positive tone pattern on the resist following SR irradiation doses below the saturation level. Surface treatment of plasma-polymerized FBM using W(CO)/sub 6/ as a monomer gas was also found to enhance differential thickness.<>

Keywords

X-ray lithography; photoresists; plasma deposited coatings; polymer films; sputter etching; O/sub 2/ plasma etching; PMMA resists; W(CO)/sub 6/; film thickness; plasma chemical processes; plasma polymerized resists; positive tone pattern; random decomposition; self development; sensitizers; styrene; synchrotron radiation vacuum lithography; Chemical processes; Lithography; Oxygen; Plasma applications; Plasma chemistry; Polymer films; Resists; Strontium; Synchrotron radiation; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation, 1988., Conference Record of the 1988 IEEE International Symposium on

Conference_Location

Cambridge, MA, USA

ISSN

1089-084X

Type

conf

DOI

10.1109/ELINSL.1988.13893

Filename

13893