1.55 μm complex-coupled DFB lasers with quaternary overgrown gratings

Author

Söderström, D. ; Lourdudoss, S. ; Carlstrom, C.F. ; Anand, S. ; Stålnacke, B. ; Buchgeister, C. ; Kamp, M.

Author_Institution

R. Inst. of Technol., Kista, Sweden

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

424

Abstract

We have demonstrated 1.55 μm complex-coupled BH-DFB lasers by employing for the first time GaInAsP overgrowth of the chemically assisted ion beam etched (CAIBE) gratings. The gratings were formed by etching partly the MQW´s to increase the gain-coupling. Although CAIBE was used for etching the gratings, the threshold current was less than 20 mA and the lasers exhibit stable single mode operation with a very large side-mode suppression ratio (SMSR) up to 55 dB

Keywords

distributed feedback lasers; laser modes; quantum well lasers; sputter etching; vapour phase epitaxial growth; 1.55 micron; 20 mA; GaInAsP; MOVPE; MQW structure; chemically assisted ion beam etching; complex-coupled BH-DFB laser; gain coupling; quaternary grating overgrowth; side mode suppression ratio; single mode operation; threshold current; Epitaxial growth; Epitaxial layers; Etching; Gratings; Indium phosphide; Laser modes; Optical coupling; Optical device fabrication; Optical materials; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739795

Filename

739795