Title :
1.55 μm complex-coupled DFB lasers with quaternary overgrown gratings
Author :
Söderström, D. ; Lourdudoss, S. ; Carlstrom, C.F. ; Anand, S. ; Stålnacke, B. ; Buchgeister, C. ; Kamp, M.
Author_Institution :
R. Inst. of Technol., Kista, Sweden
Abstract :
We have demonstrated 1.55 μm complex-coupled BH-DFB lasers by employing for the first time GaInAsP overgrowth of the chemically assisted ion beam etched (CAIBE) gratings. The gratings were formed by etching partly the MQW´s to increase the gain-coupling. Although CAIBE was used for etching the gratings, the threshold current was less than 20 mA and the lasers exhibit stable single mode operation with a very large side-mode suppression ratio (SMSR) up to 55 dB
Keywords :
distributed feedback lasers; laser modes; quantum well lasers; sputter etching; vapour phase epitaxial growth; 1.55 micron; 20 mA; GaInAsP; MOVPE; MQW structure; chemically assisted ion beam etching; complex-coupled BH-DFB laser; gain coupling; quaternary grating overgrowth; side mode suppression ratio; single mode operation; threshold current; Epitaxial growth; Epitaxial layers; Etching; Gratings; Indium phosphide; Laser modes; Optical coupling; Optical device fabrication; Optical materials; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739795
