Title :
Characteristics of quantum dash laser under the rate equation model framework
Author :
Khan, Zahed M. ; Ng, Tien K. ; Ooi, Boon S.
Author_Institution :
Div. of Phys. Sci. & Eng., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
The authors present a numerical model to study the carrier dynamics of InAs/InP quantum dash (QDash) lasers. The model is based on single-state rate equations, which incorporates both, the homogeneous and the inhomogeneous broadening of lasing spectra. The numerical technique also considers the unique features of the QDash gain medium. This model has been applied successfully to analyze the laser spectra of QDash laser.
Keywords :
III-V semiconductors; carrier mobility; indium compounds; quantum dash lasers; spectral line broadening; InAs-InP; carrier dynamics; gain medium; lasing spectra broadening; quantum dash laser; rate equation model framework; single-state rate equations; Equations; Laser modes; Laser theory; Mathematical model; Numerical models; Quantum dots; Semiconductor lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595663
