Title :
Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots
Author :
Zhao, Q.J. ; Mei, T. ; Zhang, D.H.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A theoretical analysis of wetting layer effect on electronic structures of InAs/GaAs truncated-pyramid quantum dots is carried out using an eight-band Fourier transform-based k·p method. Wetting layer changes ground-state energy significantly whereas modifies probability density function only a little. The main acting region of wetting layer is just underneath the base of the dot.
Keywords :
III-V semiconductors; density; electronic structure; gallium arsenide; ground states; indium compounds; k.p calculations; probability; semiconductor quantum dots; wetting; InAs-GaAs; eight-band Fourier transform-based k·p method; electronic structures; ground-state energy; probability density function; truncated-pyramid quantum dots; wetting layer effect; Gallium arsenide; Periodic structures; Quantum dots; Quantum mechanics; Shape; Strain;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595665
