DocumentCode :
2475702
Title :
Self-consistent modeling of a transistor vertical-cavity surface-emitting laser
Author :
Shi, Wei ; Faraji, Behnam ; Greenberg, Mark ; Berggren, Jesper ; Xiang, Yu ; Hammar, Mattias ; Chrostowski, Lukas
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada
fYear :
2010
fDate :
6-9 Sept. 2010
Firstpage :
45
Lastpage :
46
Abstract :
A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The quantum capture/escape process is simulated using a quantum-trap model. Both the steady state and frequency response of the T-VCSEL are calculated by a numerical and analytical approach.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; laser frequency stability; optical design techniques; quantum optics; quantum well lasers; radiation pressure; surface emitting lasers; transistors; In0.49Ga0.51P-GaAs; frequency response; integrated heterojunction bipolar transistor; multiple quantum well transistor laser; optical design; optoelectronic properties; quantum capture process; quantum escape process; quantum-trap model; self-consistent modeling; transistor vertical-cavity surface-emitting laser; Integrated optics; Laser modes; Optical sensors; Semiconductor process modeling; Transistors; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
ISSN :
2158-3234
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
Type :
conf
DOI :
10.1109/NUSOD.2010.5595673
Filename :
5595673
Link To Document :
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