Title :
Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method
Author :
Ishii, K. ; Morita, T. ; Isshiki, D. ; Ohki, Y.
Author_Institution :
Dept. of Electr. Eng., Waseda Univ., Shinjuku-ku, Tokyo, Japan
Abstract :
SiO2 films were deposited from TEOS (tetraethoxysilane) using the plasma CVD (chemical vapor deposition) method, and some properties including the dielectric strength were studied. The TEOS-SiO 2 film features low deposition temperature, high quality, and good step-coverage, has become indispensable as an interlevel dielectric layer. Attention is given to the following: the etching rate and absorbance of Si-O-Si bondings at 1060 cm-1 as a function of the deposition temperature, the effect of the deposition temperature on the contents of H2O molecules and Si-OH bondings, the effect of the deposition temperature on the dielectric strength and the effect of the deposition temperature on the intensity of 4.3 eV photoluminescence exited by 7.6 eV photons at 45 K
Keywords :
dielectric thin films; electric breakdown; electric strength; etching; photoluminescence; plasma CVD; silicon compounds; 1060 cm-1; 45 K; H2O molecules; Si-O-Si bondings; Si-OH bondings; SiO2 films; TEOS; TEOS-SiO2 film; breakdown; dielectric strength; etching rate; high quality; interlevel dielectric layer; low deposition temperature; photoluminescence; plasma CVD method; step-coverage; tetraethoxysilane; Bonding; Chemical vapor deposition; Dielectric breakdown; Electric breakdown; Etching; Photoluminescence; Plasma applications; Plasma chemistry; Plasma properties; Plasma temperature;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1993. Annual Report., Conference on
Conference_Location :
Pocono Manor, PA
Print_ISBN :
0-7803-0966-9
DOI :
10.1109/CEIDP.1993.378947
