• DocumentCode
    2475930
  • Title

    Numerical simulation of ZnO-based LEDs

  • Author

    Chiaria, S. ; Penna, M. ; Goano, M. ; Bellotti, E.

  • Author_Institution
    ECE Dept., Boston Univ., Boston, MA, USA
  • fYear
    2010
  • fDate
    6-9 Sept. 2010
  • Firstpage
    29
  • Lastpage
    30
  • Abstract
    Optimizing the internal quantum efficiency (IQE) is very important for UV LEDs, since the present generation of devices has very low IQE. This is particularly important for ZnO-based LEDs that are still technologically immature. This work presents the preliminary results of an ongoing investigation intended to identify the optimization criteria for the design of ZnO-based LEDs.
  • Keywords
    II-VI semiconductors; light emitting diodes; zinc compounds; UV LED; ZnO; internal quantum efficiency; numerical simulation; Aluminum gallium nitride; Charge carrier processes; Doping; Gallium nitride; Light emitting diodes; Mathematical model; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
  • Conference_Location
    Atlanta, GA
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4244-7016-7
  • Electronic_ISBN
    2158-3234
  • Type

    conf

  • DOI
    10.1109/NUSOD.2010.5595681
  • Filename
    5595681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2475930