Photoresponse simulation of visible blind GaN/AlGaN p-i-n photodiode

Author

Wang, X.D. ; Hu, W.D. ; Chen, X.S. ; Wang, L. ; Li, X.Y. ; Lu, W.

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

fYear

2010

fDate

6-9 Sept. 2010

Firstpage

31

Lastpage

32

Abstract

The spectral photoresponse characteristics for visible blind GaN/AlGaN p-i-n photodiode have been numerically studied. Effects of the absorption layer thickness and the n-layer thickness on the photoresponse spectra have been investigated. Our work shows that the absorption layer thickness and n-layer thickness have important impact on the peak value of photoresponse spectra and rejection ratio of short-wavelength side, respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; p-i-n photodiodes; photodetectors; ultraviolet detectors; wide band gap semiconductors; GaN-AlGaN; absorption layer thickness; n-layer thickness; photoresponse spectra; short-wavelength side rejection ratio; spectral photoresponse characteristics; visible blind p-i-n photodiode; Absorption; Aluminum gallium nitride; Doping; Gallium nitride; Numerical models; PIN photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on

Conference_Location

Atlanta, GA

ISSN

2158-3234

Print_ISBN

978-1-4244-7016-7

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2010.5595682

Filename

5595682