• DocumentCode
    2475956
  • Title

    A Full-Band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes

  • Author

    Moresco, Michele ; Bertazzi, Francesco ; Bellotti, Enrico

  • Author_Institution
    ECE Dept., Boston Univ., Boston, MA, USA
  • fYear
    2010
  • fDate
    6-9 Sept. 2010
  • Firstpage
    27
  • Lastpage
    28
  • Abstract
    A growing number of system applications are increasingly demanding high speed, low noise, and high sensitivity UV detectors. GaN avalanche photodiodes (APDs) are prime candidates to become the device of choice in this area. This work presents a theoretical analysis of the performance of GaN APDs using Full Band Monte Carlo simulation. A study of the multiplication gain, noise and bandwidth is presented in this paper. The numerical results are in good agreement with experimental data available in literature.
  • Keywords
    III-V semiconductors; Monte Carlo methods; avalanche photodiodes; gallium compounds; wide band gap semiconductors; GaN; avalanche photodiodes; full band Monte Carlo simulation; multiplication gain; Avalanche photodiodes; Bandwidth; Charge carrier processes; Gallium nitride; Impact ionization; Monte Carlo methods; Noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
  • Conference_Location
    Atlanta, GA
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4244-7016-7
  • Electronic_ISBN
    2158-3234
  • Type

    conf

  • DOI
    10.1109/NUSOD.2010.5595684
  • Filename
    5595684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2475956