A Full-Band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes

A growing number of system applications are increasingly demanding high speed, low noise, and high sensitivity UV detectors. GaN avalanche photodiodes (APDs) are prime candidates to become the device of choice in this area. This work presents a theoretical analysis of the performance of GaN APDs using Full Band Monte Carlo simulation. A study of the multiplication gain, noise and bandwidth is presented in this paper. The numerical results are in good agreement with experimental data available in literature.