Title :
Numerical analysis of single photon avalanche photodiodes with improved structure
Author :
Wang, W.J. ; Lin, L. ; Li, T.X. ; Li, N. ; Hu, W.D. ; Lu, W. ; Chen, X.S.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)´s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier and better to suppress the junction edge electric field compared with the floating guard ring.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor device models; InGaAs-InP; charge control layer; guard ring design; junction edge electric field; numerical analysis; sheet charge density; single photon avalanche photodiodes; Avalanche photodiodes; Electric fields; Indium gallium arsenide; Indium phosphide; Numerical models; Photonics; Physics;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595688
