Title :
Effects of polarization charge in GaN-based blue laser diodes (LD)
Author :
Cheng, Li-Wen ; Sheng, Yang ; Xia, Chang-Sheng ; Lu, Wei ; Lestrade, Michel ; Li, Zi-Qiang ; Li, Zhan-Ming
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
LASTIP software was applied to simulate a classical GaN-based blue laser diodes (LD) emitting at about 410 nm. Considering effects of polarization charge (PC) in this LD, theoretical simulation showed accordant results with that in experiments. On the other hand, without regard to PC, threshold voltage and current are lowered, while laser characteristic temperature is enhanced, which indicates that PC acts as a negative role for laser performance.
Keywords :
III-V semiconductors; gallium compounds; laser beams; light polarisation; quantum well lasers; wide band gap semiconductors; GaN; LASTIP software; blue laser diodes; laser characteristics; laser performance; polarization charge; theoretical simulation; threshold current; threshold voltage; wavelength 410 nm; Gallium nitride; Power generation; Software; Temperature; Temperature sensors; Threshold current; Threshold voltage;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595689
