Title :
Modeling of vertical external cavity semiconductor laser with MQW resonant structure
Author :
Napartovich, A.P. ; Elkin, N.N. ; Vysotsky, D.V.
Author_Institution :
SRC RF Troitsk Inst. for Innovation & Thermonucl. Res., Troitsk, Russia
Abstract :
Numerical model is developed of a VECSEL with a resonant gain structure pumped by a fast electron beam. Optical modes properties for resonator formed by Bragg reflector, chip boundary and external mirror were studied. For above threshold operation carrier density in each of QWs obeys non-linear diffusion equation. A new iteration procedure for round-trip operator evaluation was developed, which provides linear growth of computation time with a size of MQW.
Keywords :
carrier density; electron beams; laser cavity resonators; laser modes; mirrors; optical pumping; quantum well lasers; surface emitting lasers; Bragg reflector; MQW resonant structure; chip boundary; fast electron beam; linear growth; mirror; nonlinear diffusion equation; numerical model; optical mode properties; resonant gain structure; round-trip operator evaluation; threshold operation carrier density; vertical external cavity semiconductor laser; Laser beams; Laser modes; Mirrors; Nonlinear optics; Optical pumping; Vertical cavity surface emitting lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595691
