A CMOS compatible low temperature process for photonic crystal MEMS scanner

Author

Takahashi, K. ; Jung, I.W. ; Higo, A. ; Mita, Y. ; Fujita, H. ; Toshiyoshi, H. ; Solgaard, O.

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan

fYear

2009

fDate

17-20 Aug. 2009

Firstpage

77

Lastpage

78

Abstract

We report a CMOS-compatible low-temperature process for electrostatic MEMS scanner with highly reflective photonic crystal mirror in the near IR region. The photonic crystal was made in the EB-evaporated amorphous silicon layer deposited on the MEMS scanner. The reflectivity was found over 90 % at 1.55 mum wavelength. Mechanical angle displacement of 6 degree was obtained with an applied voltage of 25 Vpp at the resonance frequency of 3.36 kHz.

Keywords

amorphous semiconductors; electrostatic devices; elemental semiconductors; micro-optomechanical devices; micromirrors; optical scanners; photonic crystals; reflectivity; semiconductor thin films; silicon; CMOS-compatible low-temperature process; Si; electrostatic MEMS scanner; frequency 3.6 kHz; highly reflective photonic crystal mirror; mechanical angle displacement; near IR region; reflectivity; wavelength 1.55 mum; Amorphous silicon; CMOS process; Electrostatics; Micromechanical devices; Mirrors; Photonic crystals; Reflectivity; Resonance; Temperature; Voltage; CMOS compatible process; MEMS electrostatic scanner; Photonic Crystal;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMS and Nanophotonics, 2009 IEEE/LEOS International Conference on

Conference_Location

Clearwater, FL

Print_ISBN

978-1-4244-2382-8

Electronic_ISBN

978-1-4244-2382-8

Type

conf

DOI

10.1109/OMEMS.2009.5338587

Filename

5338587