Title :
GaAs HBT profile optimization using the Taguchi method
Author :
Henderson, G.N. ; Der-Woei Wu
Author_Institution :
Corp. R&D Center, M/A-COM Inc., Lowell, MA, USA
Abstract :
A method is presented for quantitatively optimizing HBT performance using a combination of physical and equivalent circuit models in the design-of-experiments framework. An optimized profile was designed which demonstrated over 4 dB improvement in Gmax at 10 GHz (over the M/A-COM baseline process) without resorting to reduced device dimensions and/or a thin base layer.
Keywords :
III-V semiconductors; design of experiments; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; optimisation; semiconductor device models; 10 GHz; GaAs; GaAs HBT profile optimization; M/A-COM process; Taguchi method; design-of-experiments; equivalent circuit model; gain; Circuit simulation; Design optimization; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Linear regression; Optimization methods; Performance analysis; US Department of Energy;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596606
