P1G-2 Assessment of Aluminum Nitride Films Sputtered on Iridium Electrodes

Author

Olivares, J. ; Clement, M. ; Iborra, E. ; González-Castilla, S. ; Rimmer, N. ; Rastogi, A.

Author_Institution

Univ. Polytech. de Madrid, Madrid

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

1401

Lastpage

1404

Abstract

We report the growth of highly c-axis-textured aluminum nitride (AlN) films deposited by sputtering on evaporated iridium (Ir) layers. The crystal quality of the polycrystalline AlN films is analyzed as a function of the deposition conditions of the Ir electrode, which include the substrate temperature and the use of various seed layers, such as AlN, Ti and Ti/Mo. The influence of the sputter parameters and pre-treatment of the Ir substrates by Ar⁺ bombardment in the texture of the AlN films is also investigated. X-ray diffraction (XRD), atomic force microscopy (AFM) and piezoelectric assessment through measurement of BAW devices demonstrate that exceptionally highly c-axis-oriented AlN with high piezoelectric response can be sputtered on Ir electrodes.

Keywords

X-ray diffraction; aluminium compounds; atomic force microscopy; bulk acoustic wave devices; iridium; piezoelectric thin films; sputter deposition; ultrasonics; AFM; AlN; BAW resonator; Ir; X-ray diffraction; XRD; aluminum nitride film; atomic force microscopy; bulk acoustic wave resonator; iridium electrodes; piezoelectric response; sputtering deposition; Aluminum nitride; Argon; Atomic force microscopy; Atomic measurements; Electrodes; Force measurement; Piezoelectric devices; Piezoelectric films; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2007. IEEE

Conference_Location

New York, NY

ISSN

1051-0117

Print_ISBN

978-1-4244-1384-3

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2007.352

Filename

4409925