DocumentCode
2476779
Title
P1I-1 Acoustical Parameters Characterisation of Aluminium Nitride Thin Film BAW Resonators Using Resonant Spectrum Approach
Author
Cornez, D. ; Lapp, S. ; Cochran, S. ; Kirk, K.J.
Author_Institution
Univ. of Paisley, Paisley
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
1437
Lastpage
1440
Abstract
The determination of piezoelectric properties of an aluminium nitride thin film sandwiched between two electrodes, and acoustically coupled to a supporting substrate, is considered. Measuring the properties of such a BAW composite resonator can be used for film characterisation. The resonant spectrum method has been implemented, which consists of analysing the variation in spacing of parallel resonant frequencies for the resonator. The film parameters were derived from experimental measurements of the insertion loss (s11) of aluminium nitride deposited on glass and LiNO3 respectively, with top and bottom electrodes. A one-dimensional model was used to simulate the functional behaviour of the two examples of four-layer aluminium nitride based resonators. The modelling technique for multilayer ultrasonic transducers was based on the solutions to the 1-D wave equation. It was possible to obtain good agreement between the experimental and modelled results. The values of velocity and density agreed within 0.5%. The spacing of parallel resonant frequencies could also be closely matched between the experiment and the simulation. Under these conditions, the value of kt 2 of the piezoelectric film was inferred from the model.
Keywords
acoustic resonators; aluminium compounds; bulk acoustic wave devices; piezoelectric devices; piezoelectric thin films; ultrasonic transducers; AlN-JkJk; AlN-LiNbO3; acoustical parameter characterisation; aluminium nitride thin film BAW resonator; insertion loss; multilayer ultrasonic transducer; parallel resonant frequency spacing; piezoelectric film; piezoelectric property; resonant spectrum; Acoustic measurements; Aluminum; Electrodes; Insertion loss; Loss measurement; Piezoelectric films; Resonance; Resonant frequency; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2007. IEEE
Conference_Location
New York, NY
ISSN
1051-0117
Print_ISBN
978-1-4244-1384-3
Electronic_ISBN
1051-0117
Type
conf
DOI
10.1109/ULTSYM.2007.361
Filename
4409934
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