Title :
Silicon germanium BiCMOS technology
Author :
Kempf, P. ; Racanelli, M.
Author_Institution :
CTO, Jazz Semicond., Newport Beach, CA, USA
Abstract :
In the past few years, the cutoff frequency of silicon germanium bipolar transistors has nearly quadrupled for devices integrated in production BiCMOS process technology. This has enabled integration, speed and power improvements using silicon-based solutions in communications products previously served exclusively by III-V technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar transistors; high-speed integrated circuits; integrated circuit design; integrated circuit manufacture; semiconductor materials; telecommunication equipment; IC speed/power improvements; III-V technology; RF subsystem design; SiGe; communications products; high speed communication applications; integrated SiGe BiCMOS technology; production BiCMOS process technology; silicon germanium bipolar transistor cutoff frequency; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Gallium arsenide; Germanium silicon alloys; Noise figure; Production; Radio frequency; Silicon germanium; Wireless LAN;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049016
